SEMIICONDUCTOR DEVICE

PURPOSE:A metal with high melting point, having low sheet resistance which is used for the elctrode of the metal film gate or metal for wiring, etc., to obtain a temperature-proof oxidized semi-conductor device such as MOSFET which has high-speed action.

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Bibliographische Detailangaben
Hauptverfasser: FUKUMOTO MASANORI, OOSONE TAKASHI
Format: Patent
Sprache:eng
Schlagworte:
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Beschreibung
Zusammenfassung:PURPOSE:A metal with high melting point, having low sheet resistance which is used for the elctrode of the metal film gate or metal for wiring, etc., to obtain a temperature-proof oxidized semi-conductor device such as MOSFET which has high-speed action.