SEMIICONDUCTOR DEVICE

PURPOSE:To provide a semi-conductor device, with which the saturation characteristic of Tr contained in IC is improved and also in which the generation of the phenomenon of parasitic PNPN thyristor is prevented.

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Bibliographische Detailangaben
1. Verfasser: NAKAGOME YOSHIYUKI
Format: Patent
Sprache:eng
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Zusammenfassung:PURPOSE:To provide a semi-conductor device, with which the saturation characteristic of Tr contained in IC is improved and also in which the generation of the phenomenon of parasitic PNPN thyristor is prevented.