SEMIICONDUCTOR DEVICE
PURPOSE:To provide a semi-conductor device, with which the saturation characteristic of Tr contained in IC is improved and also in which the generation of the phenomenon of parasitic PNPN thyristor is prevented.
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Format: | Patent |
Sprache: | eng |
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Zusammenfassung: | PURPOSE:To provide a semi-conductor device, with which the saturation characteristic of Tr contained in IC is improved and also in which the generation of the phenomenon of parasitic PNPN thyristor is prevented. |
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