PHOTOELECTRIC CONVERSION ELEMENT

PURPOSE:To improve photoselectric current and release voltage of the element by forming the secofnd conducting type multicrystal semiconductor layer which contains an impurity on the first conducting type single crystal semiconductor layer.

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Bibliographische Detailangaben
Hauptverfasser: OOTSU KOUJI, OKAYAMA MASAKI
Format: Patent
Sprache:eng
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Beschreibung
Zusammenfassung:PURPOSE:To improve photoselectric current and release voltage of the element by forming the secofnd conducting type multicrystal semiconductor layer which contains an impurity on the first conducting type single crystal semiconductor layer.