MANUFACTURE OF SEMICONDUCTOR DEVICE

PROBLEM TO BE SOLVED: To provide a manufacture of a semiconductor device provided with a self-aligning contact capable of narrowing a width between gate electrodes, without forming the recess of a semiconductor substrate or lowering the conductive impurity density of a source/drain diffusion layer. SOLUTION: A first wiring A and an offset insulation film 22a on the upper layer are formed on the semiconductor substrate 10, and the etching stopper film 23 of silicon nitride is formed on the entire surface. Then, the side wall masking layer 24a of silicon oxide is formed oppositely to the side wall surface of the first wiring A and the offset insulation film 22a, ions are injected with the side wall masking layer 24a as a mask and the diffusion layer 12 of conductive impurities is formed in the semiconductor substrate 10. Then, a selection rate to the etching stopper film 23 is provided, the side wall masking layer 24a is removed, an insulation film is formed on the entire surface on the upper layer of the etching stopper film 23, and a contact hole reaching the diffusion layer 12 is opened on the insulation film.