ESD-INHIBITING DEVICE AND FORMING THEREOF

PROBLEM TO BE SOLVED: To suppress a heat runway and improve stability of an ESD-inhibiting device in conjunction with a device scaling, by forming an in-plant under a shallow trench separation part of an ESD device. SOLUTION: An in-plant is formed under a trench separation structure of an ESD(Electr...

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Bibliographische Detailangaben
Hauptverfasser: ROBAATO KEI REIDEI, JIEFUREI ESU BURAUN, SUTEIIBUN EICHI BORUDOMAN, SUTEIIBUN JIEI HORUMESU
Format: Patent
Sprache:eng
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Zusammenfassung:PROBLEM TO BE SOLVED: To suppress a heat runway and improve stability of an ESD-inhibiting device in conjunction with a device scaling, by forming an in-plant under a shallow trench separation part of an ESD device. SOLUTION: An in-plant is formed under a trench separation structure of an ESD(Electrostatic Discharge) device. The in-plant is formed using a hybrid- resist. The hybrid resist formed the in-plant without any additional treatment such as mask-step. An ESD structure of a water part 2100 provides an ESD- inhibiting device function by connecting its input to the ESD device. A P++ diffusion part 2908 and an N-well 2920 constitute the first diode, and the P++ diffusion part 2908 becomes an anode and the N-well 2920 a cathode. Similarly, an N++ diffusion part 2904 and an N-well 2922 which are combined form a cathode of the second diode, and a P-type board becomes an anode.