HIGH-DENSITY PLASMA PROCESSING CHAMBER

PROBLEM TO BE SOLVED: To provide a processing chamber which provides a high-density, highly directive plasma. SOLUTION: A processing chamber 55, which processes a semiconductor substrate 60 in a plasma, has a process-gas distributor 100 for distributing the process gas into the plasma zone of the chamber. By using an inductor antenna 135, an inductive plasma is formed from the process gas in the plasma zone. A primary bias electrode 145 located at a ceiling 140 of the chamber has a conducting surface 150 exposed in the plasma zone 65. A dielectric member 155 having a power electrode embedded inside has the receiving surface for receiving the substrate. A secondary bias electrode 170 under the dielectric member 155 has a conducting surface 175 exposed in the plasma zone. An electrode voltage source 180 maintains the power electrode 165, the primary bias electrode 145 and the secondary bias electrode 170 at the different potentials and provides a high-density, highly directive plasma to the plasma zone of the chamber.