MANUFACTURE OF THIN-FILM TRANSISTOR DEVICE

PROBLEM TO BE SOLVED: To provide a reliable thin-film transistor device without contact defects at high process margin by preventing etch-off in a source/drain region, while faster etching with an oxide film is promoted when a contact hole connecting the source/drain region to a wiring layer is form...

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Bibliographische Detailangaben
1. Verfasser:	ABE HIROTSUGU
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS DEVICES OR ARRANGEMENTS, THE OPTICAL OPERATION OF WHICH ISMODIFIED BY CHANGING THE OPTICAL PROPERTIES OF THE MEDIUM OF THEDEVICES OR ARRANGEMENTS FOR THE CONTROL OF THE INTENSITY,COLOUR, PHASE, POLARISATION OR DIRECTION OF LIGHT, e.g.SWITCHING, GATING, MODULATING OR DEMODULATING ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY FREQUENCY-CHANGING NON-LINEAR OPTICS OPTICAL ANALOGUE/DIGITAL CONVERTERS OPTICAL LOGIC ELEMENTS OPTICS PHYSICS SEMICONDUCTOR DEVICES TECHNIQUES OR PROCEDURES FOR THE OPERATION THEREOF
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Beschreibung
Zusammenfassung:	PROBLEM TO BE SOLVED: To provide a reliable thin-film transistor device without contact defects at high process margin by preventing etch-off in a source/drain region, while faster etching with an oxide film is promoted when a contact hole connecting the source/drain region to a wiring layer is formed, relating to a polysilicon thin-film transistor device. SOLUTION: At least a part of source/drain regions 22b and 227 is allowed to be an amorphous silicon structure, when contact holes 30a and 30b are formed at an inter-layer insulating film 26 and a gate insulating film 23, so that an etching selection ratio of the source/drain regions 22b and 22c to the inter-layer insulating film 26 and the gate insulating film 23 is improved, thus an etch-off of the source/drain regions 22b and 22c is prevented.