SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE AND MANUFACTURE THEREOF

PROBLEM TO BE SOLVED: To improve a fuse in reliability by a method wherein an insulating film is provided below an interlayer insulating film formed on the base of an opening, an impurity-containing interlayer insulating film is formed on a semiconductor substrate, and an opening is formed in a fuse forming region so as to remove all the interlayer insulating film which contains impurities. SOLUTION: A fuse 3a and a wiring 3b are patterned on a semiconductor substrate 1 through an insulating film 2. The fuse 3a and the wiring 3b are coated with an interlayer insulating film 4a. A conductor film 5b is formed just over the fuse 3a so as to cover a fuse forming region. The conductor film 5b is covered with an interlayer insulating film 4b. An interlayer insulating film 4c is deposited on the interlayer insulating film 4b. The interlayer insulating films 4b and 4c are also provided in the fuse forming region. The parts of the interlayer insulating films 4b and 4c covering the fuse forming region are removed so as to form an opening 6 which exposes the conductive film 5b located below the interlayer insulating films 4b and 4c. By this setup, a semiconductor integrated circuit device of this design can be improved in yield and reliability.