METHOD OF FORMING MULTILAYERED WIRING STRUCTURE

PROBLEM TO BE SOLVED: To provide a method of forming a multilayered wiring structure which forms a second layer having no defective on a first wiring layer through a layer insulation film, without the use of a planarized film for this insulation film. SOLUTION: This method of forming a multilayered wiring structure on a semiconductor substrate comprises depositing a second wiring layer on a first wiring layer 6, having gaps 6 formed by physically breaking a wiring at its middle along a substrate surface through a layer insulation film composed of a lower insulation film which is not an oxide film but, e.g. SiN4 film 8 and upper oxide layer 9 formed in the substrate, etching to form a wiring of the second layer, and light etching the upper oxide film to form slit-like recesses of the layer insulation film formed at the gaps between wirings of the first layer.