METHOD AND DEVICE FOR DETECTION OF FINISHING POINT AND OPTIMIZATION OF PROCESS ON THE SPOT IN CHEMICAL AND MECHANICAL POLISHING PROCESS USING LINEAR POLISHER

PROBLEM TO BE SOLVED: To provide a CMP technique using a linear flatening tool and a film thickness monitor optimizing both the detection of a finishing point and the process of chemical and mechanical polishing (CMP). SOLUTION: This device is concerned with a linear polishing belt 220 to be used for chemically and mechanically polishing (CMP) a substrate, which has both an opening 230 and a flexible monitoring window 232 fixed to the belt to close the opening 230 and generate a monitoring channel in the belt, and can use a plurality of monitoring channels. At least a part of a film thickness monitor composed of an interferometer, is disposed in parallel with the belt, or disposed in a range formed by the belt. The finishing point of a CMP process is determined by applying the monitoring channel and the film thickness monitor to the CMP process, and the quantity of removal in the arbitrarily given circumference of a substrate is determined, the average quantity of removal over the whole surface of the substrate is determined, the deviation of the quantity of removal over the whole surface of the substrate is determined, and, the quantity of removal and uniformity are thereby optimized.