COLLECTOR ELECTRODE, WAFER TRANSFER DEVICE, SEMICONDUCTOR CLEANING APPARATUS, AND REACTION CORE CLEANING APPARATUS
PROBLEM TO BE SOLVED: To utilize batch cleaning of semiconductor wafers using thermal electron emission in a high-temperature oven, a reactor or a quick heat tool by forming collector electrodes of semiconductor wafers having surface which is either unpolished, roughened or oxidized. SOLUTION: Colle...
Gespeichert in:
| Hauptverfasser: | , , , , |
|---|---|
| Format: | Patent |
| Sprache: | eng |
| Schlagworte: | |
| Online-Zugang: | Volltext bestellen |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
| container_end_page | |
|---|---|
| container_issue | |
| container_start_page | |
| container_title | |
| container_volume | |
| creator | KORCHMAR ILYA ZINMAN YOSEF SCHOICHET LEV SERGIENKO ALEX RAVID ARIE |
| description | PROBLEM TO BE SOLVED: To utilize batch cleaning of semiconductor wafers using thermal electron emission in a high-temperature oven, a reactor or a quick heat tool by forming collector electrodes of semiconductor wafers having surface which is either unpolished, roughened or oxidized. SOLUTION: Collector electrodes are separate semiconductor wafers 120 connected to a collector voltage source Vc. Therefore, the collector wafers 120 receive impurities contaminated wafers 122 to be cleaned. Collector wafers 120 may be processed or unprocessed, and it is also preferable that its surface should be roughened or oxidized. The collector wafers 120 are placed between the contaminated wafers 122 in a comb-like manner. In the transfer apparatus, the collector wafers 120 are connected with the collector voltage source Vc, and the contaminated wafers 122 are connected with a wafer voltage source Vb. The wafer voltage source Vb is more electropositive than Vc. |
| format | Patent |
| fullrecord | <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_JPH1174245A</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>JPH1174245A</sourcerecordid><originalsourceid>FETCH-epo_espacenet_JPH1174245A3</originalsourceid><addsrcrecordid>eNqNyrEKwjAQxvEsDqK-wz1AHaoV5-NytZGYhGuqYykSJ9FifX-04ujg9P_4-E3Vg7y1TNEL8FjxmjM4YckCUdDV49B8NPS-az4Y8k43H0-W0Rm3AwwBBWNTZ4BOgzBSNN4BeeEfaq4ml-46pMW3MwUlR6qWqb-3aei7c7qlZ7sPVZ5vi1WxwfUf5AXL-TgJ</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>COLLECTOR ELECTRODE, WAFER TRANSFER DEVICE, SEMICONDUCTOR CLEANING APPARATUS, AND REACTION CORE CLEANING APPARATUS</title><source>esp@cenet</source><creator>KORCHMAR ILYA ; ZINMAN YOSEF ; SCHOICHET LEV ; SERGIENKO ALEX ; RAVID ARIE</creator><creatorcontrib>KORCHMAR ILYA ; ZINMAN YOSEF ; SCHOICHET LEV ; SERGIENKO ALEX ; RAVID ARIE</creatorcontrib><description>PROBLEM TO BE SOLVED: To utilize batch cleaning of semiconductor wafers using thermal electron emission in a high-temperature oven, a reactor or a quick heat tool by forming collector electrodes of semiconductor wafers having surface which is either unpolished, roughened or oxidized. SOLUTION: Collector electrodes are separate semiconductor wafers 120 connected to a collector voltage source Vc. Therefore, the collector wafers 120 receive impurities contaminated wafers 122 to be cleaned. Collector wafers 120 may be processed or unprocessed, and it is also preferable that its surface should be roughened or oxidized. The collector wafers 120 are placed between the contaminated wafers 122 in a comb-like manner. In the transfer apparatus, the collector wafers 120 are connected with the collector voltage source Vc, and the contaminated wafers 122 are connected with a wafer voltage source Vb. The wafer voltage source Vb is more electropositive than Vc.</description><edition>6</edition><language>eng</language><subject>BASIC ELECTRIC ELEMENTS ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC ; GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS ; SEMICONDUCTOR DEVICES ; TECHNICAL SUBJECTS COVERED BY FORMER USPC ; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS ; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ARTCOLLECTIONS [XRACs] AND DIGESTS</subject><creationdate>1999</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=19990316&DB=EPODOC&CC=JP&NR=H1174245A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,776,881,25543,76293</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=19990316&DB=EPODOC&CC=JP&NR=H1174245A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>KORCHMAR ILYA</creatorcontrib><creatorcontrib>ZINMAN YOSEF</creatorcontrib><creatorcontrib>SCHOICHET LEV</creatorcontrib><creatorcontrib>SERGIENKO ALEX</creatorcontrib><creatorcontrib>RAVID ARIE</creatorcontrib><title>COLLECTOR ELECTRODE, WAFER TRANSFER DEVICE, SEMICONDUCTOR CLEANING APPARATUS, AND REACTION CORE CLEANING APPARATUS</title><description>PROBLEM TO BE SOLVED: To utilize batch cleaning of semiconductor wafers using thermal electron emission in a high-temperature oven, a reactor or a quick heat tool by forming collector electrodes of semiconductor wafers having surface which is either unpolished, roughened or oxidized. SOLUTION: Collector electrodes are separate semiconductor wafers 120 connected to a collector voltage source Vc. Therefore, the collector wafers 120 receive impurities contaminated wafers 122 to be cleaned. Collector wafers 120 may be processed or unprocessed, and it is also preferable that its surface should be roughened or oxidized. The collector wafers 120 are placed between the contaminated wafers 122 in a comb-like manner. In the transfer apparatus, the collector wafers 120 are connected with the collector voltage source Vc, and the contaminated wafers 122 are connected with a wafer voltage source Vb. The wafer voltage source Vb is more electropositive than Vc.</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC</subject><subject>GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS</subject><subject>SEMICONDUCTOR DEVICES</subject><subject>TECHNICAL SUBJECTS COVERED BY FORMER USPC</subject><subject>TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS</subject><subject>TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ARTCOLLECTIONS [XRACs] AND DIGESTS</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>1999</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNqNyrEKwjAQxvEsDqK-wz1AHaoV5-NytZGYhGuqYykSJ9FifX-04ujg9P_4-E3Vg7y1TNEL8FjxmjM4YckCUdDV49B8NPS-az4Y8k43H0-W0Rm3AwwBBWNTZ4BOgzBSNN4BeeEfaq4ml-46pMW3MwUlR6qWqb-3aei7c7qlZ7sPVZ5vi1WxwfUf5AXL-TgJ</recordid><startdate>19990316</startdate><enddate>19990316</enddate><creator>KORCHMAR ILYA</creator><creator>ZINMAN YOSEF</creator><creator>SCHOICHET LEV</creator><creator>SERGIENKO ALEX</creator><creator>RAVID ARIE</creator><scope>EVB</scope></search><sort><creationdate>19990316</creationdate><title>COLLECTOR ELECTRODE, WAFER TRANSFER DEVICE, SEMICONDUCTOR CLEANING APPARATUS, AND REACTION CORE CLEANING APPARATUS</title><author>KORCHMAR ILYA ; ZINMAN YOSEF ; SCHOICHET LEV ; SERGIENKO ALEX ; RAVID ARIE</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_JPH1174245A3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>1999</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC</topic><topic>GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS</topic><topic>SEMICONDUCTOR DEVICES</topic><topic>TECHNICAL SUBJECTS COVERED BY FORMER USPC</topic><topic>TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS</topic><topic>TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ARTCOLLECTIONS [XRACs] AND DIGESTS</topic><toplevel>online_resources</toplevel><creatorcontrib>KORCHMAR ILYA</creatorcontrib><creatorcontrib>ZINMAN YOSEF</creatorcontrib><creatorcontrib>SCHOICHET LEV</creatorcontrib><creatorcontrib>SERGIENKO ALEX</creatorcontrib><creatorcontrib>RAVID ARIE</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>KORCHMAR ILYA</au><au>ZINMAN YOSEF</au><au>SCHOICHET LEV</au><au>SERGIENKO ALEX</au><au>RAVID ARIE</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>COLLECTOR ELECTRODE, WAFER TRANSFER DEVICE, SEMICONDUCTOR CLEANING APPARATUS, AND REACTION CORE CLEANING APPARATUS</title><date>1999-03-16</date><risdate>1999</risdate><abstract>PROBLEM TO BE SOLVED: To utilize batch cleaning of semiconductor wafers using thermal electron emission in a high-temperature oven, a reactor or a quick heat tool by forming collector electrodes of semiconductor wafers having surface which is either unpolished, roughened or oxidized. SOLUTION: Collector electrodes are separate semiconductor wafers 120 connected to a collector voltage source Vc. Therefore, the collector wafers 120 receive impurities contaminated wafers 122 to be cleaned. Collector wafers 120 may be processed or unprocessed, and it is also preferable that its surface should be roughened or oxidized. The collector wafers 120 are placed between the contaminated wafers 122 in a comb-like manner. In the transfer apparatus, the collector wafers 120 are connected with the collector voltage source Vc, and the contaminated wafers 122 are connected with a wafer voltage source Vb. The wafer voltage source Vb is more electropositive than Vc.</abstract><edition>6</edition><oa>free_for_read</oa></addata></record> |
| fulltext | fulltext_linktorsrc |
| identifier | |
| ispartof | |
| issn | |
| language | eng |
| recordid | cdi_epo_espacenet_JPH1174245A |
| source | esp@cenet |
| subjects | BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS SEMICONDUCTOR DEVICES TECHNICAL SUBJECTS COVERED BY FORMER USPC TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ARTCOLLECTIONS [XRACs] AND DIGESTS |
| title | COLLECTOR ELECTRODE, WAFER TRANSFER DEVICE, SEMICONDUCTOR CLEANING APPARATUS, AND REACTION CORE CLEANING APPARATUS |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-25T21%3A00%3A13IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-epo_EVB&rft_val_fmt=info:ofi/fmt:kev:mtx:patent&rft.genre=patent&rft.au=KORCHMAR%20ILYA&rft.date=1999-03-16&rft_id=info:doi/&rft_dat=%3Cepo_EVB%3EJPH1174245A%3C/epo_EVB%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true |