REDUCYION OF OVERHEAD TIME IN ION METAL PLASMA PROCESS

PROBLEM TO BE SOLVED: To reduce the overhead time by making the flow rate of a process gas to be fed into a process chamber higher than the flow rate to be exhausted and acceleratedly increasing the pressure in the chamber to stabilize it at treating pressure before physical vapor phase depositing treatment, and making the flow rate to be exhausted higher than the flow rate of a gas to be fed into and acceleratedly reducing the pressure after the treatment. SOLUTION: The composition of the device is the one in which a process gas is fed into a chamber 70 charged with a substrate 74 via flow rate controllers 76 and 77 from gas sources 84 and 85, and while exhaust is executed by a vacuum pump system 78, the pressure in the chamber 70 is held at a prescribed one. After the charging of the substrate 74, the process gas is flowed therein at a rate higher than the exhausting rate of a pump 78 from the gas sources 84 and 85 to regulate the pressure to a prescribed stationary one, and, depositing treatment is executed, and after the treatment, exhaust and pressure-reduction are executed at a rate double or above the exhausting rate in the depositing period. In this way, in the case of the chamber of 600 inu3 , the pressure-increasing and stabilizing time in the chamber becomes about 10 sec and the pressure-reducing time after the depositing treatment becomes about 5 sec, by which the overhead time can remarkably be reduced.