MANUFACTURE OF CAPACITOR FOR SEMICONDUCTOR DEVICE

PROBLEM TO BE SOLVED: To protect bit lines against oxidation caused by a following wet-type oxidation process by a method, wherein a silicon nitride film used for the formation of a dielectric film is protected against cracking and a thinning phenomenon. SOLUTION: In a method of manufacturing the capacitor of a semiconductor device, element isolation regions 102 are each formed on a semiconductor substrate 100, so as to distinguish an active region from an inactive region, a gate electrode is formed on the active region of the semiconductor substrate 100, a first interlayered insulating film 106 doped with no impurities is formed on the semiconductor substrate 100 including the gate electrode, a bit line 108 is formed on the interlayered insulating film 106, and a second interlayered insulating film 110 doped with no impurity is formed on the first interlayered insulating film 106, including the bit line 108.