HIGH VACUUM THIN FILM FORMING DEVICE

PROBLEM TO BE SOLVED: To provide a thin film forming device free from the application of damage and the intrusion of impurities and good in film thickness controllability. SOLUTION: To an electrically conductive vapor depositing material provided on a cathode 40 in a thin film forming device, in a s...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	AGAWA YOSHIAKI, CHIYAYAHARA AKIYOSHI, FUJII KANESHIGE, SUZUKI YASUMASA
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY SEMICONDUCTOR DEVICES SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION
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