HIGH VACUUM THIN FILM FORMING DEVICE

PROBLEM TO BE SOLVED: To provide a thin film forming device free from the application of damage and the intrusion of impurities and good in film thickness controllability. SOLUTION: To an electrically conductive vapor depositing material provided on a cathode 40 in a thin film forming device, in a state in which positive voltage is applied to an anode 30, an electrode member 42 arranged in the vicinity of the vapor depositing material 43 is applied with pulse-shaped voltage to generate trigger discharge, and arc discharge is induced on the space between the vapor depositing material 43 and the anode 30. It is constituted in such a manner that, by the arc discharge induced by the trigger discharge for one time, the fine particles of the vapor depositing material 43 are released by a prescribed amt. In the case trigger discharge is repeatedly generated by required times in a high vacuum atmosphere, extremely thin film free from impurities and damage can be formed with high film thickness precision. Moreover, in the case plural vapor depositing sources are oriented toward a substrate 4 and thin film is successively formed, multilayer film can be obtd., therefore, it is suitable for the formation of magnetic thin film.