SEMICONDUCTOR LIGHT-EMITTING ELEMENT

PROBLEM TO BE SOLVED: To lower operation current and to provide a semiconductor light- emitting element having high reliability by nonuniformly doping specified impurities to barrier layers so that an electric field generated by a piezoelectric effect is canceled. SOLUTION: A distortion quantum well active layer which is a zinc blend semiconductor is formed on a crystal semiconductor substrate 1 formed of a prescribed semiconductor material by the growth of a crystal. The crystal growing direction is set to that obtained by inclining it by 20 deg.-85 deg. from a [001] axis or an axis equivalent to the axis. The active layer is constituted of a distortion well layer 4 and barrier layers 3 and 5, whose forbidden bandwidths are larger than the layer 4. Then, p-type or n-type impurities are doped nonuniformly to the distortion well layer 4 or the barrier layers 3 and 5 or all the layers by not less than 10 cm . Thus, the semiconductor light-emitting element whose operation current is low and which has high reliability can be obtained.