THIN MASK FOR PROJECTED LITHOGRAPHY

PROBLEM TO BE SOLVED: To provide a thin film mask for a projected lithography. SOLUTION: This scattered type mask improved for being used for a charged particle beam lithography process includes a mask 40 having a thin film part 42 and scattered parts 44, and the thin film part 42 is made of conduct...

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Bibliographische Detailangaben
Hauptverfasser:	WEBER GARY ROBERT, NOVEMBRE ANTHONY EDWARD, LIDDLE JAMES A
Format:	Patent
Sprache:	eng
Schlagworte:	APPARATUS SPECIALLY ADAPTED THEREFOR BASIC ELECTRIC ELEMENTS CINEMATOGRAPHY ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY ELECTROGRAPHY HOLOGRAPHY MATERIALS THEREFOR ORIGINALS THEREFOR PHOTOGRAPHY PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES PHYSICS SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:	PROBLEM TO BE SOLVED: To provide a thin film mask for a projected lithography. SOLUTION: This scattered type mask improved for being used for a charged particle beam lithography process includes a mask 40 having a thin film part 42 and scattered parts 44, and the thin film part 42 is made of conductive materials or a plurality of materials whose one is conductive. Thus, the storage of charges in the mask can be reduced by the conductivity of the thin film part, and the specification of a charged particle pattern on a wafer which is being formed from the mask can be improved, and any distortion generated in the system can be reduced.