PRODUCTION OF SILICON CARBIDE SINTERED BODY

PROBLEM TO BE SOLVED: To provide a method for producing a high density silicon carbide sintered body by using, as carbon source, carbon powder in an amount as small as possible to keep high dimensional precision without using phenol which causes the shrinkage during sintering to increase. SOLUTION: The sintered SiC having a relative density of >=94% is produced by adding 0.15-3.0 wt.% of boron and 2.0-3.0 wt.% of carbon powder, based on the weight of SiC powder, to SiC powder, then forming the mixed powder, rapidly heating the formed compact to a temp. of 1,400-1,600 deg.C under vacuum prior to sintering and keeping the resulting formed compact at the temp. range until the residual carbon content is reduced to 0.01-0.45 wt.%.