FORMATION OF DEPOSITED FILM, MANUFACTURE OF SEMICONDUCTOR DEVICE SUBSTRATE, AND MANUFACTURE OF PHOTOVOLTAIC DEVICE

PROBLEM TO BE SOLVED: To prevent flaws and electrode failure, by applying external stress to the non-deposition surface of a strip-shaped substrate to eliminate curl deformation in the strip-shaped substrate produced by application of deformation stress. SOLUTION: Backside reflective layers 802, 803...

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Bibliographische Detailangaben
Hauptverfasser: SAITO KEISHI, SHIMODA HIROTSUGU
Format: Patent
Sprache:eng
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Zusammenfassung:PROBLEM TO BE SOLVED: To prevent flaws and electrode failure, by applying external stress to the non-deposition surface of a strip-shaped substrate to eliminate curl deformation in the strip-shaped substrate produced by application of deformation stress. SOLUTION: Backside reflective layers 802, 803 are formed on a stainless steel strip-shaped substrate 801 using a roll-to-roll-type DC magnetron sputtering system. Then an n-type layer 804, an i-type layer 805, a p-type layer 806, an n-type layer 807, an i-type layer 808, a p-type layer 809, an n-type layer 810, an i-type layer 811, and a p-type layer 812 and deposited on the backside reflective layer 803 in this order using a roll-to-roll-type plasma enhanced CVD system. Then a transparent conductor layer 813 is formed on the semiconductor layers using the roll-to-roll-type DC magnetron sputtering system, and further a triple solar cell slab having three pin junctions is made. Then the slab is passed through a cylindrical roller-type curl corrector to eliminate curl deformation.