MANUFACTURE OF SEMICONDUCTOR DEVICE
PROBLEM TO BE SOLVED: To greatly improve the reliability of a device by avoiding troubles such as imperfect contacts. SOLUTION: A silicon nitride film 5 and a silicon oxide film 6 are formed on a substrate 1. Under the condition where the etching rate of the silicon oxide film become larger than tha...
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| creator | NAKAJIMA ISATO SHUDO SHOJI |
| description | PROBLEM TO BE SOLVED: To greatly improve the reliability of a device by avoiding troubles such as imperfect contacts. SOLUTION: A silicon nitride film 5 and a silicon oxide film 6 are formed on a substrate 1. Under the condition where the etching rate of the silicon oxide film become larger than that of the silicon nitride film, the silicon nitride film 6 is subjected to dry etching. In this case, F(fluorine) which accelerates dry etching is added beforehand in the silicon oxide film 6. Thereby the silicon oxide film being left and etching stop phenomenon generated with a contact hole 9 having high aspect ratio will not occur. |
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Under the condition where the etching rate of the silicon oxide film become larger than that of the silicon nitride film, the silicon nitride film 6 is subjected to dry etching. In this case, F(fluorine) which accelerates dry etching is added beforehand in the silicon oxide film 6. Thereby the silicon oxide film being left and etching stop phenomenon generated with a contact hole 9 having high aspect ratio will not occur.</description><edition>6</edition><language>eng</language><subject>BASIC ELECTRIC ELEMENTS ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; SEMICONDUCTOR DEVICES</subject><creationdate>1999</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=19991105&DB=EPODOC&CC=JP&NR=H11307516A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,776,881,25543,76294</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=19991105&DB=EPODOC&CC=JP&NR=H11307516A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>NAKAJIMA ISATO</creatorcontrib><creatorcontrib>SHUDO SHOJI</creatorcontrib><title>MANUFACTURE OF SEMICONDUCTOR DEVICE</title><description>PROBLEM TO BE SOLVED: To greatly improve the reliability of a device by avoiding troubles such as imperfect contacts. SOLUTION: A silicon nitride film 5 and a silicon oxide film 6 are formed on a substrate 1. Under the condition where the etching rate of the silicon oxide film become larger than that of the silicon nitride film, the silicon nitride film 6 is subjected to dry etching. In this case, F(fluorine) which accelerates dry etching is added beforehand in the silicon oxide film 6. Thereby the silicon oxide film being left and etching stop phenomenon generated with a contact hole 9 having high aspect ratio will not occur.</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>SEMICONDUCTOR DEVICES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>1999</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZFD2dfQLdXN0DgkNclXwd1MIdvX1dPb3cwl1DvEPUnBxDfN0duVhYE1LzClO5YXS3AyKbq4hzh66qQX58anFBYnJqXmpJfFeAR6GhsYG5qaGZo7GxKgBAGjlIvs</recordid><startdate>19991105</startdate><enddate>19991105</enddate><creator>NAKAJIMA ISATO</creator><creator>SHUDO SHOJI</creator><scope>EVB</scope></search><sort><creationdate>19991105</creationdate><title>MANUFACTURE OF SEMICONDUCTOR DEVICE</title><author>NAKAJIMA ISATO ; SHUDO SHOJI</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_JPH11307516A3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>1999</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>SEMICONDUCTOR DEVICES</topic><toplevel>online_resources</toplevel><creatorcontrib>NAKAJIMA ISATO</creatorcontrib><creatorcontrib>SHUDO SHOJI</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>NAKAJIMA ISATO</au><au>SHUDO SHOJI</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>MANUFACTURE OF SEMICONDUCTOR DEVICE</title><date>1999-11-05</date><risdate>1999</risdate><abstract>PROBLEM TO BE SOLVED: To greatly improve the reliability of a device by avoiding troubles such as imperfect contacts. SOLUTION: A silicon nitride film 5 and a silicon oxide film 6 are formed on a substrate 1. Under the condition where the etching rate of the silicon oxide film become larger than that of the silicon nitride film, the silicon nitride film 6 is subjected to dry etching. In this case, F(fluorine) which accelerates dry etching is added beforehand in the silicon oxide film 6. Thereby the silicon oxide film being left and etching stop phenomenon generated with a contact hole 9 having high aspect ratio will not occur.</abstract><edition>6</edition><oa>free_for_read</oa></addata></record> |
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| subjects | BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES |
| title | MANUFACTURE OF SEMICONDUCTOR DEVICE |
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