MANUFACTURE OF SEMICONDUCTOR DEVICE

MANUFACTURE OF SEMICONDUCTOR DEVICE

PROBLEM TO BE SOLVED: To greatly improve the reliability of a device by avoiding troubles such as imperfect contacts. SOLUTION: A silicon nitride film 5 and a silicon oxide film 6 are formed on a substrate 1. Under the condition where the etching rate of the silicon oxide film become larger than tha...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Hauptverfasser: NAKAJIMA ISATO, SHUDO SHOJI
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:PROBLEM TO BE SOLVED: To greatly improve the reliability of a device by avoiding troubles such as imperfect contacts. SOLUTION: A silicon nitride film 5 and a silicon oxide film 6 are formed on a substrate 1. Under the condition where the etching rate of the silicon oxide film become larger than that of the silicon nitride film, the silicon nitride film 6 is subjected to dry etching. In this case, F(fluorine) which accelerates dry etching is added beforehand in the silicon oxide film 6. Thereby the silicon oxide film being left and etching stop phenomenon generated with a contact hole 9 having high aspect ratio will not occur.