SEMICONDUCTOR PRESSURE SENSOR

PROBLEM TO BE SOLVED: To obtain a semiconductor pressure sensor in which the fluctuation of static characteristics and temperature characteristics is suppressed and production yield is enhanced by reducing failure rate. SOLUTION: In a semiconductor pressure sensor 10, bottom face of the mesa structure 11B of a silicon diaphragm 11A is bonded tightly to a stem base 15 while aligning the opening of a pressure introduction nozzle 14 with the pressure detecting face 18 of a sensor chip through lamination bonding where a film thickness control material having hardness of a specified level or above is dispersed into an elastic adhesion layer exhibiting stress buffering properties to the stress caused by the temperature difference between the sensor bare chip 11 and the stem base and enclosing properties in the cavity of the sensor bare chip and an opening communicating therewith.