MANUFACTURE OF GATE ELECTRODE WHICH PREVENTS SPIKING EFFECT OF METAL SILICIDE

PROBLEM TO BE SOLVED: To provide a method for manufacturing a gate electrode which prevents spike phenomenon of metal silicide. SOLUTION: A method for manufacturing a gate electrode which prevents spike phenomenon of metal silicide is provided. The method includes; a step of forming a gate oxide lay...

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Bibliographische Detailangaben

Hauptverfasser:	RIN SEICHU, GO SHISHO, O SHOYU
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
Online-Zugang:	Volltext bestellen
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