MANUFACTURE OF GATE ELECTRODE WHICH PREVENTS SPIKING EFFECT OF METAL SILICIDE

PROBLEM TO BE SOLVED: To provide a method for manufacturing a gate electrode which prevents spike phenomenon of metal silicide. SOLUTION: A method for manufacturing a gate electrode which prevents spike phenomenon of metal silicide is provided. The method includes; a step of forming a gate oxide layer 12 on the silicon substrate 11 of an integrated circuit; a step of forming polysilicon 13 on the surface of the gate oxide layer 12; a step of forming amorphous silicon 41 on the surface of the polysilicon 13; a step of forming metal silicide on the surface of the amorphous silicon 41; and a step of defining the position of a gate electrode by etching the metal silicide, amorphous silicon 41, polysilicon 13 of the gate oxide layer 12 by lithography.