METHOD FOR PREVENTING CORROSION OF OXIDE SEMICONDUCTOR
PROBLEM TO BE SOLVED: To obtain a coating material which, when applied to the surface of a semiconductor, can prevent the surface from being corroded even when an electrolyte is formed thereon in e.g. a high-temperature environment by incorporating a film-forming agent with an ion exchange material....
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Zusammenfassung: | PROBLEM TO BE SOLVED: To obtain a coating material which, when applied to the surface of a semiconductor, can prevent the surface from being corroded even when an electrolyte is formed thereon in e.g. a high-temperature environment by incorporating a film-forming agent with an ion exchange material. SOLUTION: This material comprises a film-forming agent desirably being one forming a hydrophilic film or one forming a hydrophobic film and an ion exchange material desirably being an ion exchange resin or an inorganic ion exchange substance. It is desirable that the film-forming agent which forms a hydrophilic film is a hydrophilic-group-containing acrylic, alkyd, melamine, urea, phenolic, epoxy, cellulose, urethane, polyacetal, polyvinyl alcohol, or vinyl chloride resin. It is desirable that the film-forming agent which forms a hydrophobic agent is a cellulose, alkyd, melamine, urea, vinyl chloride, butyral, aminoalkyd, acrylic, epoxy, unsaturated polyester, urethane, olefin, or vinyl acetate resin. |
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