CRYSTAL GROWTH OF OXIDE THIN FILM

PROBLEM TO BE SOLVED: To provide a method for growing the growth of an oxide thin film, capable of preventing the excess and deficiency of bismuth, a component element, in the composition, and capable of growing a Bi2 Sr2 CaCu2 O8 oxide thin film having a high quality. SOLUTION: This method for growing the crystal of an oxide thin film comprises growing the crystal of the Bi2 Sr2 CaCu2 O8 oxide thin film 304 by a gaseous phase growth method. Therein, the method comprises the first step for growing the crystal of a Bi2 Sr2 CuO6 oxide thin film 302 only in a single molecular layer on a substrate 301 by a method for growing the crystal of a multicomponent oxide thin film containing bismuth as a component element, the second step for depositing calcium atoms and copper atoms in amounts of 1/2, respectively, the number of strontium atoms contained in the thin film 302 on the thin film 302 to form an atom-deposited layer 303, and the third step for reacting the Bi2 Sr2 CuO6 oxide thin film 302 with the calcium atoms and the copper atoms and growing the crystal of the Bi2 Sr2 CaCu2 O8 oxide thin film 304. The environmental temperatures in the steps are set constant.