SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE AND MANUFACTURE THEREOF

PROBLEM TO BE SOLVED: To prevent the occurrence of the step difference between a memory array region and a surrounding circuit region, by forming an insulating film on a memory-cell selecting MISFET and the like, forming a groove in the insulating film, forming a conducting film in the groove or the like, etching the conducting film, and forming a lower electrode so that the conducting film remains only in the groove and so on. SOLUTION: On a memory-cell selecting MISFET and a surrounding circuit region, a silicon oxide film 45, a silicon nitride film 46, a silicon oxide film 53 are deposited. A groove is formed at the upper part of a through hole 48. Polycrystal silicon is formed in the groove. Then, a photoresist film covering the silicon oxide film 53 is formed in the surrounding circuit region. Then, the silicon oxide 53 and the like are etched, and a slant surface is formed. Thereafter, a lower electrode 60 is formed from polycrystalline silicon 56. Then, a Ta2 O3 film 61 and a TiN film 62 are formed, and an information storing capacitor element C, which is constituted of the lower electrode 60, is formed by patterning and the like. Then, a silicon oxide film 64 is deposited. An SOG film 65 is formed, and the surface is flattened.