PLASMA ETCHING DEVICE

PROBLEM TO BE SOLVED: To provide a plasma etching device the maintenance work of which is easy and which is capable of executing stable plasma etching. SOLUTION: A plasma etching device 50 is composed of a quarts plate part 53 fitted to the inner side of the upper plane part 52 of a reaction chamber...

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Bibliographische Detailangaben
1. Verfasser:	OKU TETSUO
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLICMATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASSC23 AND AT LEAST ONEPROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25 NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:	PROBLEM TO BE SOLVED: To provide a plasma etching device the maintenance work of which is easy and which is capable of executing stable plasma etching. SOLUTION: A plasma etching device 50 is composed of a quarts plate part 53 fitted to the inner side of the upper plane part 52 of a reaction chamber part 51, a shielding cylinder part 55 installed on the inner side of the sidewall cylinder part 54 of the reaction chamber part 51, a pressing pawl 17 for pressing a semiconductor wafer 10 to a lower electrode 5, the supporting member 56 of a circular plate in a doughnut from, which is provided for the shielding cylinder part 55 and supports the pressing pawl 17, and a quartz cylinder part 57 which is installed on the upper face of the supporting member 56 and is provided on the inner side of the shielding cylinder part 55 and the supporting member 56 for separating the shielding cylinder part 55 and the supporting member 56 from a plasma generating area.