VAPOR DEPOSITION SOURCE AND VAPOR DEPOSITION APPARATUS

PROBLEM TO BE SOLVED: To provide a technique capable of prolonging the time to the dielectric breakdown of a vapor deposition source used at the time of forming thin films. SOLUTION: The vapor deposition source is so constituted that the creeping surface of an insulating member 3 for insulating a tr...

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Bibliographische Detailangaben
Hauptverfasser:	AGAWA YOSHIAKI, CHIYAYAHARA AKIYOSHI, FUJII KANESHIGE, YAMAMOTO YOSHIHIRO
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INDUCTANCES INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL MAGNETS METALLURGY SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES SEMICONDUCTOR DEVICES SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION TRANSFORMERS
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Beschreibung
Zusammenfassung:	PROBLEM TO BE SOLVED: To provide a technique capable of prolonging the time to the dielectric breakdown of a vapor deposition source used at the time of forming thin films. SOLUTION: The vapor deposition source is so constituted that the creeping surface of an insulating member 3 for insulating a trigger electrode 2 and a material 1 for vapor deposition when the component particles 21 of the material for vapor deposition are splashed by a trigger discharge or main discharge is provided with a non-adhesive surface 13b at which the linearly incoming component particles 21 of the material for vapor deposition released from the material 1 for vapor deposition cannot arrive. The component particles 21 of the material for vapor deposition do not directly deposit on the non-adhesive surface 13b and, therefore, the time until the component particles 21 of the material for vapor deposition is adhered between the trigger electrode 2 and the material 1 for vapor deposition to cause the degradation of the isolation voltage and eventually the dielectric breakdown are resulted and the use of the vapor deposition source 10 is no longer possible is made longer than heretofore.