VAPOR DEPOSITION SOURCE AND VAPOR DEPOSITION APPARATUS

PROBLEM TO BE SOLVED: To form thin films having decreased variations in film thicknesses on a large-area substrate. SOLUTION: The vapor deposition source 50 of the vapor deposition apparatus 10 is provided with plural cathode sections 51 to 53 within a region enclosed by a cylindrical anode section...

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Bibliographische Detailangaben
Hauptverfasser: AGAWA YOSHIAKI, FUKAZAWA HIROYUKI, CHIYAYAHARA AKIYOSHI, FUJII KANESHIGE, YAMAMOTO YOSHIHIRO, HARA YASUHIRO
Format: Patent
Sprache:eng
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Zusammenfassung:PROBLEM TO BE SOLVED: To form thin films having decreased variations in film thicknesses on a large-area substrate. SOLUTION: The vapor deposition source 50 of the vapor deposition apparatus 10 is provided with plural cathode sections 51 to 53 within a region enclosed by a cylindrical anode section 54. The respective cathode sections 51 to 53 have cathode electrodes 51a to 51c and materials for vapor deposition are respectively fixed to the front ends of these cathode electrodes 51a to 53a. When an arc discharge is induced, charged particulates are released from the respective materials for vapor deposition and, therefore, the intra-surface variations of the thin films formed on the substrate 3 surface are decreased. The splashing liquid drop particles partly readhere to the adjacent other cathode electrodes and are reutilized and, therefore, the materials for vapor deposition are less consumed and are prolonged in their life.