SURFACE PRETREATMENT METHOD FOR OXIDE SUBSTRATE USING ION BEAM AND METHOD FOR FORMING NITRIDE THIN FILM USING THE SAME

PROBLEM TO BE SOLVED: To reduce the interstitial spacing between a substrate and a deposited substance, when a thin film is formed on the substrate by modifying the surface of an oxide substrate into a nitride while irradiating the oxide substrate with a reactive N2 ion beam having an energy of a p...

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Bibliographische Detailangaben
Hauptverfasser:	KIN DOWA, SAI GENKOKU, HEN TOSHIN, KO SHAKUKIN, JONG HYONG-JIN
Format:	Patent
Sprache:	eng
Schlagworte:	AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE APPARATUS THEREFOR BASIC ELECTRIC ELEMENTS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL CRYSTAL GROWTH DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE REFINING BY ZONE-MELTING OF MATERIAL SEMICONDUCTOR DEVICES SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE SINGLE-CRYSTAL-GROWTH SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL
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Beschreibung
Zusammenfassung:	PROBLEM TO BE SOLVED: To reduce the interstitial spacing between a substrate and a deposited substance, when a thin film is formed on the substrate by modifying the surface of an oxide substrate into a nitride while irradiating the oxide substrate with a reactive N2 ion beam having an energy of a predetermined amount. SOLUTION: The surface of an oxide substrate is modified into a nitride by irradiating the oxide substrate with a reactive N2 ion beam, having an energy of 100 eV to 10 KeV by a predetermined amount. Then, the resultant substrate whose surface is transformed is subjected to a vapor deposition method, to thereby form a nitride thin film of a type defferent from that of the intermediate nitride formed on the surface during the surface pretreatment. Here, it is preferable that the oxide substrate be an Al2 O3 substrate, the ion beam be an ion beam of 1×10 /cm reactive N2 having an energy of 1 keV, the intermediate nitride formed on the surface-pretreated substrate by the surface modification is AlN, and the finally vapor-deposited nitride thin film is a GaN thin film.