CAPACITOR OF HIGH PERMITTIVITY AND MANUFACTURE THEREOF

PROBLEM TO BE SOLVED: To reduce an oxygen stabilizing material present in a final device to an irreducible minimum in amount along with the necessity for deposition, by a method wherein fine patterning by etching is dispensed with, when an oxygen stabilizing material is formed for a lower electrode. SOLUTION: A capacitor is composed of a high-permittivity dielectric body 40, an upper electrode 44, and a lower electrode 32-36. The lower electrode is equipped with a polysilicon base 32, a diffusion barrier 34 on the sidewall of the polysilicon base 32, and an oxygen stabilizing material 36 which is located on the side wall adjacent to the diffusion barrier 34 and separated from the sidewall of the polysilicon base 32 by the diffusion barrier 34. The diffusion barrier 34 prevents oxygen from reacting with or oxidizing the base 32 penetrating through the oxygen stabilizing material 36, so that the oxygen stabilizing layer 36 can be prevented from forming a silicide reacting on the base 32. The oxygen stabilizing material 36 is formed on the sidewall by etching back not through deposition or patterning by etching, and the high-permittivity dielectric body 40 is formed adjacent to the oxygen stabilizing material 36.