METHOD FOR BASE SURFACE REFORMATION AND MANUFACTURE OF SEMICONDUCTOR DEVICE

PROBLEM TO BE SOLVED: To eliminate influence of the surface dependability of a base layer surface, not depending on the condition of the base layer surface, by forming a base insulating film on a substrate, exposing the surface of the base insulating film to reform the surface prior to film formation. SOLUTION: On the surface of a Si3 N4 film 3, a Low O3 /TEOS CVD SiO2 film 5 (base insulating film) is formed. After heating the film 5 to a temperature of 350 deg.C at the surface, the surface of the film 5 is brought into contact with a plasma flow of ammonia (NH3 ) for 15 seconds to 5 minutes to reform the surface of the film 5. A High O3 /TEOS CVD SiO2 film 7 is formed on the surface of the Low O3 /TEOS CVD SiO2 film 5 by plasma CVD. Thus, influence of the surface dependability of a substrate is eliminated, not depending on the condition of the surface of the substrate.