TARGET FOR SPUTTERING AND ITS PRODUCTION

PROBLEM TO BE SOLVED: To produce a new target capable of increasing a magnetic leakage flux for a target having a compsn. in which the face-centered cubic is stable and to provide a method for producing it. SOLUTION: A target has a compsn. contg., by atom, 12 to 27% chromium, 3 to 13% tantalum, and,...

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Bibliographische Detailangaben
1. Verfasser:	KUBOI TAKESHI
Format:	Patent
Sprache:	eng
Schlagworte:	ALLOYS CHANGING THE PHYSICAL STRUCTURE OF NON-FERROUS METALS ANDNON-FERROUS ALLOYS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL FERROUS OR NON-FERROUS ALLOYS INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION TREATMENT OF ALLOYS OR NON-FERROUS METALS
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Beschreibung
Zusammenfassung:	PROBLEM TO BE SOLVED: To produce a new target capable of increasing a magnetic leakage flux for a target having a compsn. in which the face-centered cubic is stable and to provide a method for producing it. SOLUTION: A target has a compsn. contg., by atom, 12 to 27% chromium, 3 to 13% tantalum, and, preferably, one or two kinds of platinum and nickel by