METHOD FOR JOINTING CRYSTALLINE SUBSTRATES HAVING DIFFERENT CRYSTAL LATTICES

PROBLEM TO BE SOLVED: To joint substrates different in crystal lattices by forming a layer of a material, having specified thickness on a first substrate in first and second substrates which differ in crystal lattices. SOLUTION: A device 200 is formed on an n+ silicon substrate 205. The device 200 is formed of deposition to which the pattern of a material 210 is given. A layer 220 of InGaAs and a layer 225 of InP are formed on an InP substrate. An InP/InGaAs substrate is placed in a silicon MBE chamber, and a silicon layer 215 having the thickness of a range from 1 nm to 2 nm is grown on the surface of InGaAs 220. Thus, defects due to the non-matching of the lattices is controlled. A substrate covered with Si and the silicon substrate 205 are placed on a container, which compressively bonds them in a device where the substrate is connected to the silicon substrate 205. When the substrate is heated at about 450-700 deg.C in H gas while it is placed under pressure, the substrate differing in the crystal lattices can be connected.