SPUTTERING METHOD USING IONIZED THIN-FILM FORMING SUBSTANCE

PROBLEM TO BE SOLVED: To provide a sputtering method which uses an ionized thin-film forming substance. SOLUTION: A sputtering method using an ionized thin-film forming substance comprises a metallization step for forming a barrier layer, a resistor layer and an interconnection layer through sputter...

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Bibliographische Detailangaben
Hauptverfasser:	BOKU EIKO, RYU HONEI, RI GENTOKU
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY SEMICONDUCTOR DEVICES SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION
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Beschreibung
Zusammenfassung:	PROBLEM TO BE SOLVED: To provide a sputtering method which uses an ionized thin-film forming substance. SOLUTION: A sputtering method using an ionized thin-film forming substance comprises a metallization step for forming a barrier layer, a resistor layer and an interconnection layer through sputtering. In this case, a primary deposited film 106 is formed using a sputtering system with on ac power applied to a semiconductor substrate having an arbitrary film formed thereon, and a secondary deposited film 108 is then formed with the ac power continuously applied thereto. As a result, damages to the surface of the semiconductor substrate can be suppressed, and step coverage characteristic is improved.