SEMICONDUCTOR LASER AND MANUFACTURE THEREOF

PROBLEM TO BE SOLVED: To raise the thermal conductivity of an insulation layer material used for an II-IV group semiconductor laser to increase the refractive index difference from the II-IV group semiconductor in case of a ridge stripe, thereby obtaining a semiconductor laser operative at a low threshold current operation and high reliability. SOLUTION: A semiconductor laser having an n-type clad layer 114, active layer 116, p-type clad layer 118, and p-type contact layer 119 formed successively on a single crystal substrate 111 comprises an insulation film 122 contg. polycrystalline Si or Ge having stripe-like high-thermal conductivity openings and preferably ZnS, ZnSe, CdSe or ZnTe beneath the Si- or Ge-contg. layer to enhance the adhesion.