SEMICONDUCTOR SENSOR
PROBLEM TO BE SOLVED: To provide a semiconductor sensor which permits easy adjustment for variations of an operating point without increasing external terminals. SOLUTION: A pressure sensor is constituted by a CMOS sensor circuit 1 and a CMOS sensor circuit 2, which are formed with the same element...
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creator | SHIBATA TOSHITAKA SATO SHINICHI |
description | PROBLEM TO BE SOLVED: To provide a semiconductor sensor which permits easy adjustment for variations of an operating point without increasing external terminals. SOLUTION: A pressure sensor is constituted by a CMOS sensor circuit 1 and a CMOS sensor circuit 2, which are formed with the same element parameter on a semiconductor substrate. The pressure sensor is a sensing transistor where at least one of NMOS transistor QN1 and PMOS transistor QP1 in the CMOS sensor circuit 1 becomes sensitive to pressure and a channel conductance varies. On-chip resistance elements Rx, Ry are inserted between source terminals QN1, QN2 of NOMS transistors and VSS terminals where the transistor is connected and an adjusting operating point is performed by adjusting resistance value by laser-trimming. |
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SOLUTION: A pressure sensor is constituted by a CMOS sensor circuit 1 and a CMOS sensor circuit 2, which are formed with the same element parameter on a semiconductor substrate. The pressure sensor is a sensing transistor where at least one of NMOS transistor QN1 and PMOS transistor QP1 in the CMOS sensor circuit 1 becomes sensitive to pressure and a channel conductance varies. On-chip resistance elements Rx, Ry are inserted between source terminals QN1, QN2 of NOMS transistors and VSS terminals where the transistor is connected and an adjusting operating point is performed by adjusting resistance value by laser-trimming.</description><edition>6</edition><language>eng</language><subject>BASIC ELECTRIC ELEMENTS ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT ; MEASURING ; MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER,MECHANICAL EFFICIENCY, OR FLUID PRESSURE ; MEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION,OR SHOCK ; PHYSICS ; SEMICONDUCTOR DEVICES ; TESTING</subject><creationdate>1999</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=19990709&DB=EPODOC&CC=JP&NR=H11183507A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25564,76547</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=19990709&DB=EPODOC&CC=JP&NR=H11183507A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>SHIBATA TOSHITAKA</creatorcontrib><creatorcontrib>SATO SHINICHI</creatorcontrib><title>SEMICONDUCTOR SENSOR</title><description>PROBLEM TO BE SOLVED: To provide a semiconductor sensor which permits easy adjustment for variations of an operating point without increasing external terminals. 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On-chip resistance elements Rx, Ry are inserted between source terminals QN1, QN2 of NOMS transistors and VSS terminals where the transistor is connected and an adjusting operating point is performed by adjusting resistance value by laser-trimming.</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT</subject><subject>MEASURING</subject><subject>MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER,MECHANICAL EFFICIENCY, OR FLUID PRESSURE</subject><subject>MEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION,OR SHOCK</subject><subject>PHYSICS</subject><subject>SEMICONDUCTOR DEVICES</subject><subject>TESTING</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>1999</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZBAJdvX1dPb3cwl1DvEPUgh29Qv2D-JhYE1LzClO5YXS3AyKbq4hzh66qQX58anFBYnJqXmpJfFeAR6GhoYWxqYG5o7GxKgBAJYZHwo</recordid><startdate>19990709</startdate><enddate>19990709</enddate><creator>SHIBATA TOSHITAKA</creator><creator>SATO SHINICHI</creator><scope>EVB</scope></search><sort><creationdate>19990709</creationdate><title>SEMICONDUCTOR SENSOR</title><author>SHIBATA TOSHITAKA ; SATO SHINICHI</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_JPH11183507A3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>1999</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT</topic><topic>MEASURING</topic><topic>MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER,MECHANICAL EFFICIENCY, OR FLUID PRESSURE</topic><topic>MEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION,OR SHOCK</topic><topic>PHYSICS</topic><topic>SEMICONDUCTOR DEVICES</topic><topic>TESTING</topic><toplevel>online_resources</toplevel><creatorcontrib>SHIBATA TOSHITAKA</creatorcontrib><creatorcontrib>SATO SHINICHI</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>SHIBATA TOSHITAKA</au><au>SATO SHINICHI</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>SEMICONDUCTOR SENSOR</title><date>1999-07-09</date><risdate>1999</risdate><abstract>PROBLEM TO BE SOLVED: To provide a semiconductor sensor which permits easy adjustment for variations of an operating point without increasing external terminals. SOLUTION: A pressure sensor is constituted by a CMOS sensor circuit 1 and a CMOS sensor circuit 2, which are formed with the same element parameter on a semiconductor substrate. The pressure sensor is a sensing transistor where at least one of NMOS transistor QN1 and PMOS transistor QP1 in the CMOS sensor circuit 1 becomes sensitive to pressure and a channel conductance varies. On-chip resistance elements Rx, Ry are inserted between source terminals QN1, QN2 of NOMS transistors and VSS terminals where the transistor is connected and an adjusting operating point is performed by adjusting resistance value by laser-trimming.</abstract><edition>6</edition><oa>free_for_read</oa></addata></record> |
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subjects | BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT MEASURING MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER,MECHANICAL EFFICIENCY, OR FLUID PRESSURE MEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION,OR SHOCK PHYSICS SEMICONDUCTOR DEVICES TESTING |
title | SEMICONDUCTOR SENSOR |
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