SEMICONDUCTOR SENSOR

PROBLEM TO BE SOLVED: To provide a semiconductor sensor which permits easy adjustment for variations of an operating point without increasing external terminals. SOLUTION: A pressure sensor is constituted by a CMOS sensor circuit 1 and a CMOS sensor circuit 2, which are formed with the same element...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: SHIBATA TOSHITAKA, SATO SHINICHI
Format: Patent
Sprache:eng
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Beschreibung
Zusammenfassung:PROBLEM TO BE SOLVED: To provide a semiconductor sensor which permits easy adjustment for variations of an operating point without increasing external terminals. SOLUTION: A pressure sensor is constituted by a CMOS sensor circuit 1 and a CMOS sensor circuit 2, which are formed with the same element parameter on a semiconductor substrate. The pressure sensor is a sensing transistor where at least one of NMOS transistor QN1 and PMOS transistor QP1 in the CMOS sensor circuit 1 becomes sensitive to pressure and a channel conductance varies. On-chip resistance elements Rx, Ry are inserted between source terminals QN1, QN2 of NOMS transistors and VSS terminals where the transistor is connected and an adjusting operating point is performed by adjusting resistance value by laser-trimming.