HSG CAPACITOR FORMATION METHOD FOR PREVENTING BRIDGE ON CAPACITOR LOWER ELECTRODE

PROBLEM TO BE SOLVED: To provide a method for removing any undesired HSG formed on the surface of an insulating film outside an HSG(hemispheric grain) capacitor lower electrode pattern, on a semiconductor substrate on which the lower electrode pattern is formed. SOLUTION: The surface of an HSG-shaped lower electrode pattern 108 is etched back into almost 100-500 by using dry etching using a plasma, under a condition that an etching selection rate of a polysilicon constituting a capacitor pattern for an oxide film constituting an insulating film 102 is 10 to 50:1 so that undesired HSG formed on the surface of the insulating film 102 can be removed. Thus, short-circuit failure between two adjacent bit lines can be reduced.