DEVICE FOR GROWING SINGLE CRYSTAL AND GROWTH OF SINGLE CRYSTAL

PROBLEM TO BE SOLVED: To prevent the drop of a single crystal having a large diameter and a large weight and surely and safely pull the single crystal in a depressurizied chamber. SOLUTION: A seed crystal 24a is immersed in melted Si liquid in a quartz crucible 14, and subsequently pulled up to form...

Ausführliche Beschreibung

Bibliographische Detailangaben

1. Verfasser:	YAMAGISHI HIROTOSHI
Format:	Patent
Sprache:	eng
Schlagworte:	AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE APPARATUS THEREFOR CHEMISTRY CRYSTAL GROWTH METALLURGY PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE REFINING BY ZONE-MELTING OF MATERIAL SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE SINGLE-CRYSTAL-GROWTH UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL
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