OVERHEAD SOLENOID ANTENNA AND INDUCTIVELY COUPLED RF PLASMA REACTOR HAVING MODULAR SHUTTING-IN MAGNET LINER

PROBLEM TO BE SOLVED: To provide a device by which a desired process and a process sequence can be performed in a plasma process chamber regardless of a change in a boundary condition. SOLUTION: According to the first situation, a plasma reactor having a chamber 60 to house plasma and a passage 58 c...

Ausführliche Beschreibung

Gespeichert in:

Bibliographische Detailangaben
Hauptverfasser:	RODERICK CRAIG, TSUI JOSHUA, COLLINS KENNETH, ASKARINAM ERIC, SCHNEIDER GERHARD, YIN GERALD, GRIMARD DENNIS, WU ROBERT, RICE MICHAEL, TROW JOHN, BUCHBERGER DOUGLAS
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR ELECTRICITY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY PLASMA TECHNIQUE PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OFNEUTRONS PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMICBEAMS SEMICONDUCTOR DEVICES SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION
Online-Zugang:	Volltext bestellen
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!

Beschreibung
Zusammenfassung:	PROBLEM TO BE SOLVED: To provide a device by which a desired process and a process sequence can be performed in a plasma process chamber regardless of a change in a boundary condition. SOLUTION: According to the first situation, a plasma reactor having a chamber 60 to house plasma and a passage 58 communicated with the chamber, is strengthened by a first removable plasma shutting-in magnet module adjacently placed in the passage containing a first module housing and a first plasma shutting-in magnet in the housing. It may contain a second removable plasma shutting-in magnet module adjacently placed in the passage containing a second module housing and a second plasma shutting-in magnet. The first and the second modules are desirably arranged on the opposed both sides of the passage. The first plasma shutting-in magnet can be kept below its Curie temperature by thermally joining a cooling system to a chamber main body.