MANUFACTURE OF SEMICONDUCTOR ELEMENT

PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor element, which can perform a processing of good accuracy on the element without depending greatly rate of etching a semiconductor layer containing a group II element such as zinc(Zn), and a group VI element such as selenium (Se), on the material constituting the layer. SOLUTION: A buffer layer 2, a first group II-VI buffer layer 3, a second group II-VI buffer layer 4, a first conductivity type clad layer 5, a first guide layer 6, an active layer 7, a second guide layer 8, a second conductivity type clad layer 9, a first semiconductor layer 10, a second semiconductor layer 11, a superlattice layer 12 and a contact layer 13 are epitaxially grown in order on the surface of a substrate 1, Thereafter, a resist film 20 of a striped pattern is formed on the layer 13. A wet etching is performed using the resist film 20 as a mask and the layers 13, 12 and 11 are selectively removed. As an etchant, a mixed solution containing hydrogen peroxide (H2 O2 ), hydrogen fluoride(HF) and a hydrochloric acid (HCl) is used.