POWER INTEGRATED CIRCUIT, MANUFACTURE THEREOF, AND CONVERTER INCLUDING CIRCUIT THEREOF

PROBLEM TO BE SOLVED: To apply the circuit of a power electronic component of an electric motor vehicle, wherein especially voltage used is strikingly higher than the voltage allowed for a silica layer, and to integrate whatever kinds of constituent parts on the same integrated circuit by containing carbon in an atomic pattern of diamond in an insulting layer. SOLUTION: Two MOS transistor are formed of substrate layers 22 and 24. Unlike IGBT, however, a layer 36 containing carbon in an atomic pattern of diamond is attached to the upper surface of the N-layer 24. An amorphous or polycrystalline silicon layer, which is made to be attached to the upper surface of the layer 36, is converted into a single crystal by a zone-melting recrystallization method. Then, the single-crystal silicon is doped, and an N+ type doped region 38, an N- type doped region 40, an N- type doped region 41, a P- type doped region 42 and a P+ type doped region 44 are formed.