CHEMICAL VAPOR DEPOSITION FILM-FORMING DEVICE

PROBLEM TO BE SOLVED: To provide a device for forming a CVD film whose thickness and quality over the entirety thereof, specifically at the periphery and at the central portion of a wafer, are uniform. SOLUTION: There is provided with a device for forming a film by chemical vapor deposition, compris...

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Bibliographische Detailangaben
1. Verfasser: NOHAMA SHIYOUJI
Format: Patent
Sprache:eng
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Zusammenfassung:PROBLEM TO BE SOLVED: To provide a device for forming a CVD film whose thickness and quality over the entirety thereof, specifically at the periphery and at the central portion of a wafer, are uniform. SOLUTION: There is provided with a device for forming a film by chemical vapor deposition, comprising a quartz boat 40 on which a wafer is mounted being supported by supporting members at the peripheral edge thereof and conveyed to a process chamber. A starting gas is introduced into the process chamber which accommodates the quartz boat 40 mounting the wafer, so as to form a CVD film on the wafer by chemical vapor deposition. This chemical vapor deposition film-forming device is of a vertical type, and the supporting members of the quartz boat 40 therein are constituted of quartz poles 42 having supporting grooves 46 to which the peripheral edge of the wafer is inserted so as to be horizontally supported thereby. Every portion of the individual quartz poles 42, in which the supporting groove 46 is formed, is thinly shaped.