MACHINING METHOD FOR SEMICONDUCTOR SUBSTRATE

PROBLEM TO BE SOLVED: To restrict the occurrence of a machining damage layer in a series of manufacturing process ranging to the specular finish of a semiconductor wafer. SOLUTION: In a method for manufacturing a semiconductor wafer of specular finish as a raw material for an IC, a LSI or a super LSI, including wrapping, etching and polishing processes, the wafer after a wrapping process is arranged on a fixed plate face in a machine to which abrasive grain fixed polishing pad is pasted on the surface to incorporate a machining process of dry thrusting rotation. The abrasive grain fixed to the polishing pad is at least one of abrasive grain fine powder formed of silicon oxide, cerium oxide, chrome oxide, calcium oxide, calcium carbonate, barium carbonate, manganese oxide and zirconium oxide.