LIGHT-EMITTING DIODE DEVICE AND MANUFACTURE THEREOF

PROBLEM TO BE SOLVED: To improve both the external quantum efficiency and productivity for a short-wavelength light-emitting diode device. SOLUTION: A device is formed by successively laminating a reflection layer 14 provided with a Bragg reflector structure, a first clad layer 15 composed of (n)-type ZnMgSSe, a quantum well active layer 17 composed of Zn1-x Cdx Se, a second clad layer 19 composed of (p)-type ZnMgSSe and a contact layer 22 composed of (p)-type ZnTe on a substrate 11 composed of (n)-type GaAs. On the upper surface of the contact layer 22, a Schottky electrode 23 for a pad composed of Al whose potential barrier for the contact layer 22 is more than 0.3 eV is provided. On the upper surface of the contact layer 22, a (p)-side ohmic electrode 24 for transmitting the emitted light is formed over the entire surface, including the Schottky electrode 23. On the back surface of a crystal growth surface in the substrate 11, an (n)-side ohmic electrode 25 is formed.