DRAM CELL CAPACITOR AND MANUFACTURE OF THE SAME

PROBLEM TO BE SOLVED: To prevent the generation of a short circuit between capacitor storage electrodes. SOLUTION: This manufacturing method includes a stage for forming a photoresist film pattern on a storage electrode conductive film, a stage for etching an upper part of the conductive film by thi...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: NAM SEOK-WOO, SHIN JIUL, HAN MIN-SEOG, LEE HYUNG-SEOK
Format: Patent
Sprache:eng
Schlagworte:
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