DRAM CELL CAPACITOR AND MANUFACTURE OF THE SAME

PROBLEM TO BE SOLVED: To prevent the generation of a short circuit between capacitor storage electrodes. SOLUTION: This manufacturing method includes a stage for forming a photoresist film pattern on a storage electrode conductive film, a stage for etching an upper part of the conductive film by this pattern, so that a polymer is formed on both sidewalls of the pattern during etching and thus causes the edge of the upper part of the conductive film to be inclined, a stage for etching the remaining part of the conductive film by using the pattern and polymer, so that an upper surface of an interlayer insulating film 106 is exposed and forming a capacitor lower electrode 110a, and a stage for forming a HSG silicon film 116 on a capacitor lower electrode such that the capacitor lower electrode has a recessed and protruding surface, while the HSG film is not formed on an inclined or round part 117 of an upper part of the capacitor lower electrode.