FIELD EFFECT TRANSISTOR

PROBLEM TO BE SOLVED: To provide a new kind of signal transistor and memory device storing information through the use of polarization of ferroelectrics. SOLUTION: This device is provided with a ferroelectric which is a floating gate FET and arranged between a gate 5 and a floating gate 7, and with the satisfactorily formed resistor of a thin SiO2 insulator 8 between the floating gate and a transistor channel 3c. In like the conventional structure, this device connects a floating gate to a transistor channel capacitively and resistively to enable rad/write of the device by using low voltage. The reason that this device gives rather advantages concerning operation at a low voltage and high speed with respect to more than 10 times of repeating cycles is due to the device durability being restricted by resistance to ferroelectrics rather than oxide breakage. In addition, the device gives considerable advantages for integrating at giga bit density.